Students acquire knowledge in the field of modeling ang simulation of semiconductor components. Students are able to combine theory and simulation approach to component modeling.

Students who complete the course are able to: -understand the secondary effects in modern submicron components, -recognize effects in contemporary models of submicron transistors - estimate second and first order submicron transistor effects influence based on results obtained from the software package Cadence.

Basic characteristics of microelectronic circuits. The basic model MOSFET of small dimensions. An advanced model of MOSFET of small dimensions (the effect of high electrical field- the modulation of length, the hot electron effect, the mobility change as a function of gate polarization, short-band length effect- DIBL, the directions of gate loss and the effective oxide width). Modelling of the parasitic bipolar transistor in MOSFET structure. MOSFET treshold change modelling.Modelling of non-quasistatic MOSFET operating regime. The RF MOSFET model. The overview of contemporary MOSFET models (BSIM, EKV, MOS MODEL 9, MOSA1). Heterojunction electronics components (MESFET, HEMT, HBT). Semiconductor process and device mismatch modelling . Software tool Cadence will be used during simulations and component model analysis.

Lectures. Auditory practice. Computer practice. Laboratory practice. Tutorial work.